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ST 2SB772S
PNP Silicon Epitaxial Transistor
Medium Power Low Voltage Transistor The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -ICM -IB Ptot Tj TS
Value 40 30 5 3 7 600 500 150 - 55 to + 150
Unit V V V A A mA mW
O
C C
O
Characteristics (Ta = 25 OC)
Parameter DC Current Gain at -VCE = 2 V, -IC = 1 A Current Gain Group Q P E Symbol hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob Min. 100 160 200 30 Typ. 80 45 Max. 200 320 400 1 1 0.5 2 Unit A A V V MHz pF
at -VCE = 2 V, -IC = 20 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 3 V Collector-Emitter Saturation Voltage at -IC= 2 A, -IB = 200 mA Base-Emitter Saturation Voltage at -IC= 2 A, -IB = 200 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 0.1 A Output Capacitance at -VCB = 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 04/10/2006
ST 2SB772S
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 04/10/2006

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